Etude des corrélations entre paramètres de préparation, caractéristiques électriques et physicochimiques d'échantillons de a-Si:H dopés ou non = A study of correlations between preparation parameters and electrical and physicochemical characteristics of doped or non-doped a-Si:HRANCHOUX, B; CURRIE, J. F.Canadian journal of physics (Print). 1985, Vol 63, Num 1, pp 54-58, issn 0008-4204Article

A comparison of electronegativity seriesSACHER, E; CURRIE, J. F.Journal of electron spectroscopy and related phenomena. 1988, Vol 46, Num 2, pp 173-177, issn 0368-2048Article

Millimeter-wave time-resolved measurement near a discontinuity : separating temporally overlapped incident and reflected signalsSHAH, S. A; ZENG, A; WONG, W. S et al.IEEE microwave and guided wave letters. 1996, Vol 6, Num 2, pp 79-81, issn 1051-8207Article

Combustion of effluent gases from a metal-organic vapor phase epitaxy systemCOVA, P; MASUT, R. A; TRAN, C. A et al.Combustion science and technology. 1994, Vol 97, Num 1-3, pp 1-11, issn 0010-2202Article

Laser plasma X-ray lithography using novolak resistsCHAKER, M; BOILY, S; LAFONTAINE, H et al.Microelectronic engineering. 1990, Vol 11, Num 1-4, pp 313-316, issn 0167-9317Conference Paper

Fabrication, characterization, and analysis of zinc-diffused GaAs waveguidesTOUAM, T; WU, C; GIGASE, Y et al.IEEE journal of quantum electronics. 1989, Vol 25, Num 5, pp 850-853, issn 0018-9197, 4 p., part 1Article

Laser patterning of thin-film electrochemical gas sensorsLECOURS, A; CARON, M; CIUREANU, P et al.Applied surface science. 1996, Vol 96-98, pp 341-346, issn 0169-4332Conference Paper

The use of elastic recoil detection for stoichiometry determination of reactively evaporated TiN layersGAGNON, G; CURRIE, J. F; BREBNER, J. L et al.Journal of applied physics. 1993, Vol 74, Num 6, pp 4233-4235, issn 0021-8979Article

Carrier loss by rapid thermal-annealing in Si-doped GaAs grown by MOCVD (metal-organic chemical vapour deposition)AKTIK, C; CURRIE, J. F; BOSSE, F et al.Canadian journal of physics (Print). 1991, Vol 69, Num 3-4, pp 353-356, issn 0008-4204, 4 p.Conference Paper

Ajustement par recuits rapides RTA (rapid thermal annealing) des contraintes dans des couches minces de tungstène utilisées comme absorbant pour des masques à rayons X = Adjustment by rapid thermal annealing of stress in tungsten thin films used as absorbant for X ray masksLAFONTAINE, H; CURRIE, J. F; BOILY, S et al.Canadian journal of physics (Print). 1991, Vol 69, Num 3-4, pp 451-455, issn 0008-4204, 5 p.Conference Paper

Caractérisation des dispositifs photovoltaïques au a-Si:H = Caracterization of photovoltaic cells made of hydrogenated amorphous siliconDIAWARA, Y; CURRIE, J. F; NAJAFI, S. I et al.Canadian journal of physics (Print). 1991, Vol 69, Num 3-4, pp 530-537, issn 0008-4204, 8 p.Conference Paper

Experimental characterization of the Si/Al/tetramethylammonium hydroxide systemTASHTOUSH, A; LANDSBERGER, L. M; ESSALIK, A et al.Journal of the Electrochemical Society. 2001, Vol 148, Num 7, pp C456-C460, issn 0013-4651Article

Release-control structures for cantilever-based sensorsNIKPOUR, B; NASEH, S; LANDSBERGER, L. M et al.Sensors and materials. 1998, Vol 10, Num 5, pp 287-296, issn 0914-4935Article

Reactive sputtering of InP in N₂ and N₂/O₂ plasmasSUNDARARAMAN, C. S; LAFONTAINE, H; POULIN, S et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1991, Vol 9, Num 3, pp 1433-1439, issn 0734-211XArticle

Rapid thermal annealing effect on near-surface stoichiometry of GaAs by heavy-ion Rutherford backscatteringGAGNON, G; HOUDAYER, A; CURRIE, J. F et al.Journal of applied physics. 1991, Vol 70, Num 2, pp 1036-1038, issn 0021-8979Article

SiO₂ spin-on glass deposited on Si, GaAs, and InPPENGNIAN SHEN; IRAJ, S; NAJAFI et al.Canadian journal of physics (Print). 1991, Vol 69, Num 3-4, pp 527-529, issn 0008-4204, 3 p.Conference Paper

Effect des paramètres de croissance sur les couches épitaxiales d'InP obtenues par MOCVD (Metal-organic chemical vapor deposition) à basse pression = Effects of growth parameters on InP epitaxial layers obtained by MOCVD (Metal-organic chemical vapor deposition) at low pressureCOVA, P; MASUT, R. A; CURRIE, J. F et al.Canadian journal of physics (Print). 1991, Vol 69, Num 3-4, pp 412-421, issn 0008-4204, 10 p.Conference Paper

Integration of a sensitive material to a silicon-based device for CO detectionRENAULT, O; BRIAND, D; DELABOUGLISE, G et al.Sensors and actuators. A, Physical. 1999, Vol 74, Num 1-3, pp 225-228, issn 0924-4247Conference Paper

Pulsed laser deposition of nasicon thin filmsIZQUIERDO, R; HANUS, F; LANG, T et al.Applied surface science. 1996, Vol 96-98, pp 855-858, issn 0169-4332Conference Paper

Rapid thermal annealing for reducing stress in tungsten x-ray mask absorberDIAWARA, Y; LAFONTAINE, H; CHAKER, M et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 2, pp 296-300, issn 1071-1023Conference Paper

Mécanismes de croissance épitaxiale en phase vapeur aux organo-métalliques de InP = Mechanisms of organometallic vapor phase epitaxial growth of InPCOVA, P; MASUT, R. A; CURRIE, J. F et al.Journal de physique. III (Print). 1992, Vol 2, Num 12, pp 2333-2347, issn 1155-4320Article

Détecteur photovoltaïque au silicium amorpheDIAWARA, Y; CURRIE, J. F; NAJAFI, S. I et al.Canadian journal of physics (Print). 1990, Vol 68, Num 3, pp 317-320, issn 0008-4204Article

Photoluminescence study of sulfide layers on p-type InPLEONELLI, R; SUNDARARAMAN, C. S; CURRIE, J. F et al.Applied physics letters. 1990, Vol 57, Num 25, pp 2678-2679, issn 0003-6951, 2 p.Article

Chemical characterization of plasma-polymerized hexamethyldisilazane by nuclear elastic recoil detectionGROLEAU, R; CURRIE, J. F; WERTHEIMER, M. R et al.Thin solid films. 1986, Vol 136, Num 1, pp 85-92, issn 0040-6090Article

Progress in amorphous-silicon photovoltaic-device researchBREBNER, J. L; COCHRANE, R. W; AZELMAD, A et al.Canadian journal of physics (Print). 1985, Vol 63, Num 6, pp 786-797, issn 0008-4204Article